Sale
SAMSUNG 990 PRO PCIE 4.0 NVME 2TB SSD DRIVE
- Stock Status: Currently In Stock
- Part Number: MZ-V9P2T0B/AM
- UPC Code: 887276657011
$239.99
$339.99
Specifications:
Make and Model Samsung 990 PRO PCIe 4.0 NVMe M.2 SSD
Part Number MZ-V9P2T0B/AM
Capacity 2TB
Formatted capacity is less due to O/S formatting, partitioning, applications, etc.
Form Factor M.2 2280
Interface PCIe Gen 4.0 x4
NVMe 2.0
Sequential Bandwidth Sequential Reads: Up to 7,450 MB/sec*
Sequential Writes: Up to 6,900 MB/sec*
Random IOPS
4KB, QD32 Random Read: Up to 1,400,000 IOPS*
4KB, QD1 Random Read: Up to 22,000 IOPS*
4KB, QD32 Random Write: Up to 1,550,000 IOPS*
4KB, QD1 Random Write: Up to 80,000 IOPS*
Cache Memory 2GB Low Power DDR4 SDRAM
Controller Samsung in-house controller
Flash Type Samsung V-NAND 3-bit MLC
AES Encryption AES 256 - bit Encryption (Class 0) TCG / Opal IEEE1667 (Encrypted drive)
Garbage Collection Auto Garbage Collection Algorithm
TRIM Support Yes
S.M.A.R.T. Support Yes
MTBF 1.5 Million Hours Reliability (MTBF)
Endurance Total Bytes Written: 1200TB Written
Temperature Operating: 0 ~ 70° C
Shock 1,500G for 0.5ms (Half Sine Wave)
Power Idle: 55mW max.
Average: 5.5W Typical
Maximum: 8.5W (Burst Mode)
Voltage 3.3V ± 5 % Allowable voltage
Dimensions (WxHxD) 80 x 22 x 2.3 mm
Weight Approx. 9g
Make and Model Samsung 990 PRO PCIe 4.0 NVMe M.2 SSD
Part Number MZ-V9P2T0B/AM
Capacity 2TB
Formatted capacity is less due to O/S formatting, partitioning, applications, etc.
Form Factor M.2 2280
Interface PCIe Gen 4.0 x4
NVMe 2.0
Sequential Bandwidth Sequential Reads: Up to 7,450 MB/sec*
Sequential Writes: Up to 6,900 MB/sec*
Random IOPS
4KB, QD32 Random Read: Up to 1,400,000 IOPS*
4KB, QD1 Random Read: Up to 22,000 IOPS*
4KB, QD32 Random Write: Up to 1,550,000 IOPS*
4KB, QD1 Random Write: Up to 80,000 IOPS*
Cache Memory 2GB Low Power DDR4 SDRAM
Controller Samsung in-house controller
Flash Type Samsung V-NAND 3-bit MLC
AES Encryption AES 256 - bit Encryption (Class 0) TCG / Opal IEEE1667 (Encrypted drive)
Garbage Collection Auto Garbage Collection Algorithm
TRIM Support Yes
S.M.A.R.T. Support Yes
MTBF 1.5 Million Hours Reliability (MTBF)
Endurance Total Bytes Written: 1200TB Written
Temperature Operating: 0 ~ 70° C
Shock 1,500G for 0.5ms (Half Sine Wave)
Power Idle: 55mW max.
Average: 5.5W Typical
Maximum: 8.5W (Burst Mode)
Voltage 3.3V ± 5 % Allowable voltage
Dimensions (WxHxD) 80 x 22 x 2.3 mm
Weight Approx. 9g